FMMT589TA, Bipolar Transistors - BJT PNP Medium Power
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см. техническую документацию
см. техническую документацию
580 ֏
от 10 шт. —
436 ֏
от 100 шт. —
225 ֏
от 1000 шт. —
139 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 650 mV |
| Configuration: | Single |
| Continuous Collector Current: | -1 A |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FMMT58 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 1A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 650mV@2A, 200mA |
| DC Current Gain (hFE@Ic,Vce) | 100@500mA, 2V |
| Power Dissipation (Pd) | 500mW |
| Transistor Type | PNP |
| Transition Frequency (fT) | 100MHz |
| Вес, г | 0.01 |
Техническая документация
Datasheet FMMT589TA
pdf, 686 КБ
