ZDT6753TA, Bipolar Transistors - BJT NPN/PNP 100V
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см. техническую документацию
см. техническую документацию
1 460 ֏
от 10 шт. —
1 150 ֏
от 100 шт. —
830 ֏
от 500 шт. —
660 ֏
1 шт.
на сумму 1 460 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT NPN/PNP 100V 2A 2750mW 8-Pin SM8 T/R
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 230 mV, 300 mV |
| Configuration: | Dual |
| Continuous Collector Current: | 2 A |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 175 MHz, 140 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SM-8 |
| Pd - Power Dissipation: | 2.75 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZDT6753 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 120 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 0.23 V |
| Configuration | Dual |
| Continuous Collector Current | 2 A |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product FT | 175 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SM-8 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 2.75 W |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | ZDT6753 |
| Subcategory | Transistors |
| Transistor Polarity | NPN, PNP |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Base Emitter Saturation Voltage (V) | 1.25@100mA@1A |
| Maximum Collector Base Voltage (V) | 120 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@100mA@1A|0.5@200mA@2A |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2750 |
| Maximum Transition Frequency (MHz) | 175(Typ) |
| Minimum DC Current Gain | 70@50mA@2V|100@500mA@2V|55@1A@2V|25@2A@2V |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Supplier Package | SM8 |
| Type | NPN|PNP |
| Вес, г | 0.2 |
