ZDT694TA, Bipolar Transistors - BJT Dual NPN Medium Power

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1 460 ֏

от 10 шт. — 1 150 ֏

от 100 шт. — 830 ֏

от 500 шт. — 660 ֏

1 шт. на сумму 1 460 ֏

Номенклатурный номер: 8004841763

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Trans GP BJT NPN 120V 0.5A 2750mW 8-Pin SM8 T/R

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	120 V
Collector- Emitter Voltage VCEO Max:	120 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Dual
DC Current Gain hFE Max:	500
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	130 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SM-8
Pd - Power Dissipation:	2.75 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZDT694
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Automotive	No
Configuration	Dual Dual Collector
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Base Emitter Saturation Voltage (V)	0.9@10mA@1A
Maximum Collector Base Voltage (V)	120
Maximum Collector-Emitter Saturation Voltage (V)	0.25@0.5mA@0.1A\|0.5@5mA@0.4A
Maximum Collector-Emitter Voltage (V)	120
Maximum DC Collector Current (A)	0.5
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2750
Maximum Transition Frequency (MHz)	130(Min)
Minimum DC Current Gain	500@100mA@2V\|400@200mA@2V\|150@400mA@2V
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Product Category	Bipolar Power
Supplier Package	SM8
Type	NPN
Вес, г	117