ZTX453, Bipolar Transistors - BJT NPN Medium Power

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800 ֏

от 10 шт. — 710 ֏

от 100 шт. — 427 ֏

от 500 шт. — 345 ֏

1 шт. на сумму 800 ֏

Номенклатурный номер: 8004841827

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор NPN, биполярный, 100В, 1А, 1Вт, TO92 Характеристики

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	120 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	700 mV
Configuration:	Single
Continuous Collector Current:	1 A
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	4000
Gain Bandwidth Product fT:	150 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Brand	Diodes Incorporated
Collector- Base Voltage VCBO	120 V
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	0.7 V
Configuration	Single
Continuous Collector Current	1 A
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	4000
Gain Bandwidth Product fT	150 MHz
Height	4.01 mm
Length	4.77 mm
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	1 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Pd - Power Dissipation	1 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	ZTX453
Transistor Polarity	NPN
Unit Weight	0.016 oz
Width	2.41 mm
Вес, г	0.45