ZTX453STZ, Bipolar Transistors - BJT NPN Medium Power
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см. техническую документацию
см. техническую документацию
800 ֏
от 10 шт. —
710 ֏
от 100 шт. —
427 ֏
от 500 шт. —
345 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 120 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Collector-Emitter Saturation Voltage: | 700 mV |
Configuration: | Single |
Continuous Collector Current: | 1 A |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Gain Bandwidth Product fT: | 150 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 1 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Ammo Pack |
Pd - Power Dissipation: | 1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZTX453 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 0.45 |
Техническая документация
Datasheet ZTX453
pdf, 365 КБ