ZTX457, Bipolar Transistors - BJT NPN High Voltage
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см. техническую документацию
см. техническую документацию
800 ֏
от 10 шт. —
710 ֏
от 100 шт. —
427 ֏
от 500 шт. —
345 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 300 V |
Collector- Emitter Voltage VCEO Max: | 300 V |
Collector-Emitter Saturation Voltage: | 300 mV |
Configuration: | Single |
Continuous Collector Current: | 500 mA |
DC Current Gain hFE Max: | 50 at 10 mA, 10 V |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Gain Bandwidth Product fT: | 75 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +200 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZTX457 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Maximum Collector Base Voltage | 300 V |
Maximum Collector Emitter Voltage | 300 V |
Maximum DC Collector Current | 500 mA |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 20 MHz |
Maximum Operating Temperature | +200 °C |
Maximum Power Dissipation | 1 W |
Minimum DC Current Gain | 50 |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-92 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Вес, г | 0.4536 |