ZTX457STZ, Bipolar Transistors - BJT NPN High Voltage
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см. техническую документацию
см. техническую документацию
800 ֏
от 10 шт. —
710 ֏
от 100 шт. —
432 ֏
от 500 шт. —
347 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 300 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| Continuous Collector Current: | 500 mA |
| DC Current Gain hFE Max: | 50 at 10 mA, 10 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Gain Bandwidth Product fT: | 75 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Ammo Pack |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX457 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.45 |
Техническая документация
Datasheet ZTX457
pdf, 40 КБ
