ZTX549, Bipolar Transistors - BJT PNP Medium Power
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см. техническую документацию
см. техническую документацию
530 ֏
от 10 шт. —
484 ֏
от 100 шт. —
339 ֏
от 500 шт. —
289 ֏
1 шт.
на сумму 530 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный (BJT) транзистор PNP 30 В, 1 А, 100 МГц, 1 Вт, сквозное отверстие, E-Line (совместим с TO-92)
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 35 V |
Collector- Emitter Voltage VCEO Max: | 30 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | -1 A |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Gain Bandwidth Product fT: | 100 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 1 A |
Maximum Operating Temperature: | +200 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZTX549 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Base Product Number | ZTX549 -> |
Current - Collector (Ic) (Max) | 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
ECCN | EAR99 |
Frequency - Transition | 100MHz |
HTSUS | 8541.29.0075 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 200В°C (TJ) |
Package | Bulk |
Package / Case | E-Line-3 |
Power - Max | 1W |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | E-Line (TO-92 compatible) |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib, Ic | 750mV @ 200mA, 2A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Collector Emitter Voltage Max | 30В |
Continuous Collector Current | 1А |
DC Current Gain hFE Min | 80hFE |
DC Усиление Тока hFE | 80hFE |
Power Dissipation | 1Вт |
Квалификация | - |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | ZTX Series |
Максимальная Рабочая Температура | 200°C |
Монтаж транзистора | Through Hole |
Полярность Транзистора | PNP |
Стиль Корпуса Транзистора | E-Line |
Частота Перехода ft | 100МГц |
Вес, г | 0.45 |
Техническая документация
Datasheet ZTX549
pdf, 58 КБ