ZTX757STZ, Bipolar Transistors - BJT PNP Super E-Line
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 020 ֏
от 10 шт. —
840 ֏
от 100 шт. —
560 ֏
от 500 шт. —
417 ֏
1 шт.
на сумму 1 020 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 300V 0.5A Automotive 3-Pin E-Line Box
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 300 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | -500 mA |
| DC Collector/Base Gain hfe Min: | 50 at 100 mA, 5 V, 40 at 10 mA, 5 V |
| DC Current Gain hFE Max: | 50 at 100 mA, 5 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Gain Bandwidth Product fT: | 30 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Ammo Pack |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX757 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -300 V |
| Collector- Emitter Voltage VCEO Max | -300 V |
| Configuration | Single |
| Continuous Collector Current | -0.5 A |
| DC Collector/Base Gain hfe Min | 50 at 100 mA at 5 V, 40 at 10 mA at 5 V |
| DC Current Gain hFE Max | 50 at 100 mA at 5 V |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 2000 |
| Gain Bandwidth Product fT | 30 MHz |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 1 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | ZTX757 |
| Transistor Polarity | PNP |
| Width | 2.41 mm |
| Вес, г | 0.4536 |
Техническая документация
Datasheet ZTX757
pdf, 54 КБ
Документация
pdf, 77 КБ
