ZTX758, Bipolar Transistors - BJT PNP 400V 0.5A

Фото 1/3 ZTX758, Bipolar Transistors - BJT PNP 400V 0.5A
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см. техническую документацию
930 ֏
от 10 шт.800 ֏
от 100 шт.660 ֏
от 500 шт.510 ֏
1 шт. на сумму 930 ֏
Номенклатурный номер: 8004841873
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 400 V
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Single
Continuous Collector Current: -0.5 A
DC Current Gain hFE Max: 50 at 1 mA, 5 V
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 4000
Gain Bandwidth Product fT: 50 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: +200 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-92-3
Packaging: Bulk
Pd - Power Dissipation: 1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZTX758
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 500 mA
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 50 MHz
Maximum Operating Temperature +200 °C
Maximum Power Dissipation 1 W
Minimum DC Current Gain 50
Mounting Type Through Hole
Number of Elements per Chip 1
Package Type E-Line
Pin Count 3
Transistor Configuration Single
Transistor Type PNP
Вес, г 0.45

Техническая документация

Datasheet ZTX758
pdf, 522 КБ