ZTX758, Bipolar Transistors - BJT PNP 400V 0.5A
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см. техническую документацию
см. техническую документацию
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930 ֏
от 10 шт. —
800 ֏
от 100 шт. —
660 ֏
от 500 шт. —
510 ֏
1 шт.
на сумму 930 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 400 V |
Collector- Emitter Voltage VCEO Max: | 400 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | -0.5 A |
DC Current Gain hFE Max: | 50 at 1 mA, 5 V |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Gain Bandwidth Product fT: | 50 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +200 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZTX758 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Maximum Collector Base Voltage | 400 V |
Maximum Collector Emitter Voltage | 400 V |
Maximum DC Collector Current | 500 mA |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 50 MHz |
Maximum Operating Temperature | +200 °C |
Maximum Power Dissipation | 1 W |
Minimum DC Current Gain | 50 |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | E-Line |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | PNP |
Вес, г | 0.45 |
Техническая документация
Datasheet ZTX758
pdf, 522 КБ