ZTX851, Bipolar Transistors - BJT NPN Big Chip SELine
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см. техническую документацию
см. техническую документацию
1 280 ֏
от 10 шт. —
1 020 ֏
от 100 шт. —
730 ֏
от 500 шт. —
590 ֏
1 шт.
на сумму 1 280 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
BIPOLAR TRANSISTOR, NPN, 60V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:130MHz, Power Dissipation Pd:1.2W, DC Collector Current:5A, DC Current Gain hFE:200hFE, No. of Pins:3Pins, MSL:- , RoHS Compliant: Yes
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 150 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Configuration: | Single |
| Continuous Collector Current: | 5 A |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 130 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1.2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| REACH - SVHC: | Details |
| Series: | ZTX851 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Transistor Polarity | NPN; Collector Emitter Voltage V(br)ceo |
| Case | TO92 |
| Collector current | 5A |
| Collector-emitter voltage | 60V |
| Current gain | 25…300 |
| Frequency | 130MHz |
| Kind of package | bulk |
| Manufacturer | DIODES INCORPORATED |
| Mounting | THT |
| Polarisation | bipolar |
| Power dissipation | 1.2W |
| Type of transistor | NPN |
| Maximum Collector Base Voltage | 150 V |
| Maximum Collector Emitter Voltage | 60 V |
| Maximum DC Collector Current | 5 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 130 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.2 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Вес, г | 0.45 |
