ZXT690BKTC, Bipolar Transistors - BJT NPN Low Saturation
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см. техническую документацию
см. техническую документацию
1 280 ֏
от 10 шт. —
1 020 ֏
от 100 шт. —
730 ֏
от 500 шт. —
590 ֏
1 шт.
на сумму 1 280 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 230 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3 A |
| DC Current Gain hFE Max: | 500 at 100 mA, 2 V |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 150 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 4 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZXT690 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Collector-Emitter Breakdown Voltage | 45V |
| Maximum DC Collector Current | 3A |
| Pd - Power Dissipation | 3.9W |
| Transistor Type | NPN |
| Maximum Collector Base Voltage | 60 V |
| Maximum Collector Emitter Voltage | 45 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 150 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3.9 W |
| Minimum DC Current Gain | 400 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Collector Current (Ic) | 3A |
| Collector Cut-Off Current (Icbo) | 20nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 230mV@3A, 150mA |
| DC Current Gain (hFE@Ic,Vce) | 150@2A, 2V |
| Power Dissipation (Pd) | 3.9W |
| Transition Frequency (fT) | 150MHz |
| Вес, г | 0.2604 |
