ZXTC4591AMCTA, Bipolar Transistors - BJT 40V High Perf Trans Ic = 3A 500mV 1A

ZXTC4591AMCTA, Bipolar Transistors - BJT 40V High Perf Trans Ic = 3A 500mV 1A
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см. техническую документацию
1 060 ֏
от 10 шт.880 ֏
от 100 шт.590 ֏
от 500 шт.446 ֏
1 шт. на сумму 1 060 ֏
Номенклатурный номер: 8004842077
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 40 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Dual
Continuous Collector Current: -1.5 A, 2 A
DC Collector/Base Gain hfe Min: 300 at 500 mA, 5 V
DC Current Gain hFE Max: 900 at 500 mA, 5 V
Emitter- Base Voltage VEBO: 3 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 150 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: W-DFN3020-8
Pd - Power Dissipation: 1.5 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZXTC45
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN, PNP
Вес, г 0.01

Техническая документация

Datasheet
pdf, 210 КБ