ZXTC6720MCTA, Bipolar Transistors - BJT Dual 80V NPN 70V PNP VCEO 80V Rsat 68mOh

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1 060 ֏

от 10 шт. — 880 ֏

от 100 шт. — 590 ֏

от 500 шт. — 445 ֏

1 шт. на сумму 1 060 ֏

Номенклатурный номер: 8004842081

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V, 70 V
Collector- Emitter Voltage VCEO Max:	80 V, 70 V
Collector-Emitter Saturation Voltage:	240 mV, 175 mV
Configuration:	Dual
Continuous Collector Current:	-2.5 A, 3.5 A
DC Collector/Base Gain hfe Min:	300 at 200 mA, 2 V
DC Current Gain hFE Max:	900 at 200 mA, 2 V
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	160 MHz, 180 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	3.5 A, 2.5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	DFN3020B-8
Pd - Power Dissipation:	1.5 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTC6720
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN, PNP
Вес, г	0.01