ZXTD617MCTA, Bipolar Transistors - BJT Dual 15V NPN Low Sat 4.5A Ic 100mV 45mOhm

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1 060 ֏

от 10 шт. — 880 ֏

от 100 шт. — 590 ֏

от 500 шт. — 446 ֏

1 шт. на сумму 1 060 ֏

Номенклатурный номер: 8004842082

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	15 V
Collector-Emitter Saturation Voltage:	240 mV
Configuration:	Dual
DC Collector/Base Gain hfe Min:	200 at 10 mA, 2 V
DC Current Gain hFE Max:	415 at 10 mA, 2 V
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	120 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	4.5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	DFN3020B-8
Pd - Power Dissipation:	1.5 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTD617
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.01