CSD13306W, MOSFETs 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA
![CSD13306W, MOSFETs 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA](https://static.chipdip.ru/lib/892/DOC016892957.jpg)
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см. техническую документацию
см. техническую документацию
660 ֏
от 10 шт. —
580 ֏
от 100 шт. —
357 ֏
от 500 шт. —
266 ֏
1 шт.
на сумму 660 ֏
Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Id - Continuous Drain Current: | 3.5 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | DSBGA-6 |
Pd - Power Dissipation: | 1.9 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 11.2 nC |
Rds On - Drain-Source Resistance: | 10.2 mOhms |
Series: | CSD13306W |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Vgs - Gate-Source Voltage: | -10 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 700 mV |
Вес, г | 0.01 |