CSD15571Q2, MOSFETs 20V N-Channel NexFET Pwr MOSFET
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см. техническую документацию
см. техническую документацию
620 ֏
от 10 шт. —
530 ֏
от 100 шт. —
317 ֏
от 1000 шт. —
168 ֏
1 шт.
на сумму 620 ֏
Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 4.1 ns |
| Forward Transconductance - Min: | 25 S |
| Id - Continuous Drain Current: | 22 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | WSON-6 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.1 nC |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Rise Time: | 17.2 ns |
| Series: | CSD15571Q2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 9.9 ns |
| Typical Turn-On Delay Time: | 4.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 4.1 ns |
| Height | 0.75 mm |
| Id - Continuous Drain Current | 2.1 A |
| Length | 2 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | WSON-FET-6 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 2.5 nC |
| Rds On - Drain-Source Resistance | 16 mOhms |
| Rise Time | 17.2 ns |
| RoHS | Details |
| Series | CSD15571Q2 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 9.9 ns |
| Typical Turn-On Delay Time | 17.2 ns |
| Unit Weight | 0.000198 oz |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.45 V |
| Width | 2 mm |
| Вес, кг | 6.97 |
Техническая документация
Datasheet CSD15571Q2
pdf, 884 КБ
