CSD16322Q5, MOSFETs N-Channel NexFET Pwr MOSFETs
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 410 ֏
от 10 шт. —
1 060 ֏
от 100 шт. —
850 ֏
от 500 шт. —
670 ֏
1 шт.
на сумму 1 410 ֏
Описание
Unclassified
Texas Instruments NexFET™ Power MOSFETThe Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 3.7 ns |
| Forward Transconductance - Min: | 106 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 3.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.8 nC |
| Rds On - Drain-Source Resistance: | 5.8 mOhms |
| Rise Time: | 10.7 ns |
| Series: | CSD16322Q5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 12.3 ns |
| Typical Turn-On Delay Time: | 6.1 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, кг | 8.15 |
