CSD16327Q3, MOSFETs N-Channel NexFET Pwr MOSFET
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1 шт.
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Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 6.2 nC |
Rds On - Drain-Source Resistance: | 4.8 mOhms |
Series: | CSD16327Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -8 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
T ;ROHS COMPLIANT | YESC ; C D C I |
Вес, кг | 73.3 |
Техническая документация
Datasheet
pdf, 449 КБ