CSD16327Q3T, MOSFETs 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm 8-VSON-CLIP -55 to 150
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1 240 ֏
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970 ֏
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Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 6.3 ns |
| Forward Transconductance - Min: | 96 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 74 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.4 nC |
| Rds On - Drain-Source Resistance: | 4.8 mOhms |
| Rise Time: | 15 ns |
| Series: | CSD16327Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 13 ns |
| Typical Turn-On Delay Time: | 5.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Continuous Drain Current (Id) | 60A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@24A, 8V |
| Drain Source Voltage (Vdss) | 25V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.4V@250uA |
| Input Capacitance (Ciss@Vds) | 1.3nF@12.5V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 74W |
| Total Gate Charge (Qg@Vgs) | 8.4nC@4.5V |
| Type | null |
| Вес, г | 0.04 |
Техническая документация
Datasheet
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