CSD16407Q5, MOSFETs N-Ch NexFET Power MOSFETs

CSD16407Q5, MOSFETs N-Ch NexFET Power MOSFETs
Изображения служат только для ознакомления,
см. техническую документацию
2 160 ֏
от 10 шт.1 680 ֏
от 100 шт.1 270 ֏
от 500 шт.1 000 ֏
1 шт. на сумму 2 160 ֏
Номенклатурный номер: 8004997175
Бренд: Texas Instruments

Описание

Unclassified
Texas Instruments NexFET™ Power MOSFET
The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 9 ns
Forward Transconductance - Min: 111 S
Id - Continuous Drain Current: 60 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: VSON-CLIP-8
Pd - Power Dissipation: 3.1 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 13.3 nC
Rds On - Drain-Source Resistance: 2.5 mOhms
Rise Time: 18.4 ns
Series: CSD16407Q5
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 11.9 ns
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Voltage: -16 V, +16 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Вес, г 0.1174