CSD17303Q5, MOSFETs 30V N Channel NexFET Power MOSFET
![CSD17303Q5, MOSFETs 30V N Channel NexFET Power MOSFET](https://static.chipdip.ru/lib/214/DOC027214397.jpg)
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см. техническую документацию
см. техническую документацию
2 070 ֏
от 10 шт. —
1 630 ֏
от 100 шт. —
1 220 ֏
от 250 шт. —
1 130 ֏
1 шт.
на сумму 2 070 ֏
Описание
Unclassified
TI N-Channel 8-23-12
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 10.4 ns |
Forward Transconductance - Min: | 114 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 3.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 18 nC |
Rds On - Drain-Source Resistance: | 2.4 mOhms |
Rise Time: | 16 ns |
Series: | CSD17303Q5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 27 ns |
Typical Turn-On Delay Time: | 11.4 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
Channel Mode | Enhancement |
Continuous Drain Current | 32A |
Drain-Source On-Volt | 30V |
Gate-Source Voltage (Max) | 10V |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Package Type | SON |
Packaging | Tape and Reel |
Pin Count | 8 |
Polarity | N |
Power Dissipation | 3.2W |
Type | Power MOSFET |
Вес, г | 803 |