CSD17304Q3, MOSFETs 30V N Channel NexFET Power MOSFET
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Описание
Unclassified
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Development Kit: | TPS65090EVM |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 3.1 ns |
Forward Transconductance - Min: | 48 S |
Id - Continuous Drain Current: | 56 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 2.7 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 5.1 nC |
Rds On - Drain-Source Resistance: | 7.5 mOhms |
Rise Time: | 9.1 ns |
Series: | CSD17304Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | Power MOSFET |
Typical Turn-Off Delay Time: | 10.4 ns |
Typical Turn-On Delay Time: | 5.1 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 900 mV |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.9mΩ@10V |
Drain Source Voltage (Vdss) | 30V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.2V |
Type | N Channel |
Current - Continuous Drain (Id) @ 25В°C | 15A(Ta), 56A(Tc) |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 955pF @ 15V |
Manufacturer | Texas Instruments |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | 8-PowerTDFN |
Packaging | Tape & Reel(TR) |
Part Status | Active |
Power Dissipation (Max) | 2.7W(Ta) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 17A, 8V |
Series | NexFETв(ў |
Supplier Device Package | 8-VSON-CLIP(3.3x3.3) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | +10V, -8V |
Vgs(th) (Max) @ Id | 1.8V @ 250ВµA |
Вес, кг | 4.86 |
Техническая документация
Datasheet CSD17304Q3
pdf, 367 КБ