CSD17313Q2, MOSFETs 30V N Channel NexFET Power MOSFET
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Описание
Unclassified
Texas Instruments NexFET™ Power MOSFETThe Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | TMDSCSK388, TMDSCSK8127 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 1.3 ns |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | WSON-6 |
| Pd - Power Dissipation: | 17 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.1 nC |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Rise Time: | 3.9 ns |
| Series: | CSD17313Q2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 4.2 ns |
| Typical Turn-On Delay Time: | 2.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.024Ом |
| Power Dissipation | 2.3Вт |
| Количество Выводов | 6вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 8В |
| Напряжение Истока-стока Vds | 30В |
| Непрерывный Ток Стока | 5А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 1.3В |
| Рассеиваемая Мощность | 2.3Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.024Ом |
| Стиль Корпуса Транзистора | SON |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Вес, г | 0.0087 |
