CSD17313Q2T, MOSFETs 30V, N-Channel NexFET Power Mosfet
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 020 ֏
от 10 шт. —
800 ֏
от 100 шт. —
600 ֏
от 250 шт. —
580 ֏
1 шт.
на сумму 1 020 ֏
Описание
Unclassified
Описание Транзистор: N-MOSFET, полевой, 30В, 5А, 17Вт, WSON6, 2x2мм Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 1.3 ns |
| Forward Transconductance - Min: | 16 S |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | WSON-FET-6 |
| Pd - Power Dissipation: | 17 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.1 nC |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Rise Time: | 3.9 ns |
| Series: | CSD17313Q2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 4.2 ns |
| Typical Turn-On Delay Time: | 2.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Base Product Number | CSD17313 -> |
| Current - Continuous Drain (Id) @ 25В°C | 5A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-WDFN Exposed Pad |
| Power Dissipation (Max) | 2.4W (Ta), 17W (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 8V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 6-WSON (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -8V |
| Vgs(th) (Max) @ Id | 1.8V @ 250ВµA |
| Continuous Drain Current (Id) | 5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30mΩ@8V, 4A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
| Power Dissipation (Pd) | 2.4W |
| Type | N Channel |
| Вес, г | 8 |
Техническая документация
Datasheet CSD17313Q2T
pdf, 406 КБ
