CSD17575Q3, MOSFETs 30V, N-channel NexFET Pwr MOSFET

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930 ֏

от 10 шт. — 750 ֏

от 100 шт. — 550 ֏

от 500 шт. — 426 ֏

1 шт. на сумму 930 ֏

Номенклатурный номер: 8004997213

Unclassified

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Resistance	2300000 Ω
Maximum Drain Source Voltage	30 V
Maximum Gate Threshold Voltage	1.1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	VSONP
Pin Count	8
Series	NexFET
Transistor Material	Si
Brand	Texas Instruments
Configuration	Single
Factory Pack Quantity	250
Fall Time	3 ns
Forward Transconductance - Min	118 S
Height	1 mm
Id - Continuous Drain Current	60 A
Length	3.3 mm
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSON-Clip-8
Packaging	Cut Tape
Pd - Power Dissipation	108 W
Product Category	MOSFET
Qg - Gate Charge	23 nC
Rds On - Drain-Source Resistance	2.6 mOhm
Rise Time	10 ns
RoHS	Details
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	4 ns
Unit Weight	0.000847 oz
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Width	3.3 mm
Вес, кг	8.98