CSD17577Q5AT, MOSFETs 30V NCH NexFET
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см. техническую документацию
см. техническую документацию
1 320 ֏
от 10 шт. —
1 020 ֏
от 100 шт. —
730 ֏
1 шт.
на сумму 1 320 ֏
Описание
Unclassified
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 53 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 4.8 mOhms |
| Rise Time: | 12 ns |
| Series: | CSD17577Q5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Base Product Number | CSD17577 -> |
| Current - Continuous Drain (Id) @ 25В°C | 60A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2310pF @ 15V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3W (Ta), 53W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 18A, 10V |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 8-VSONP (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 1.8V @ 250ВµA |
| Continuous Drain Current (Id) | 60A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.2mΩ@18A, 10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
| Input Capacitance (Ciss@Vds) | 2.31nF@15V |
| Power Dissipation (Pd) | 3W;53W |
| Total Gate Charge (Qg@Vgs) | 35nC@10V |
| Type | null |
| Вес, г | 0.48 |
