CSD17578Q3AT, MOSFETs 30V NCh NexFET Pwr MOSFET
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1 680 ֏
от 10 шт. —
1 280 ֏
от 100 шт. —
950 ֏
от 250 шт. —
890 ֏
1 шт.
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Описание
Unclassified
Описание Транзистор N-MOSFET, полевой, 30В, 20А, 37Вт, VSONP8 3,3x3,3мм Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 1 ns |
Forward Transconductance - Min: | 48 S |
Id - Continuous Drain Current: | 20 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 37 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7.9 nC |
Rds On - Drain-Source Resistance: | 8.2 mOhms |
Rise Time: | 6 ns |
Series: | CSD17578Q3A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 13 ns |
Typical Turn-On Delay Time: | 2 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Channel Type | N |
Maximum Continuous Drain Current | 14 V |
Maximum Drain Source Voltage | 30 V |
Mounting Type | Surface Mount |
Package Type | VSONP |
Continuous Drain Current (Id) | 20A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.3mΩ@10A, 10V |
Drain Source Voltage (Vdss) | 30V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.9V@250uA |
Input Capacitance (Ciss@Vds) | 1.59nF@15V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 3.2W;37W |
Total Gate Charge (Qg@Vgs) | 22.2nC@10V |
Type | null |
Вес, г | 66 |