CSD18532NQ5BT, MOSFETs 60-V N-Channel NexFET Power Mosfet
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2 560 ֏
от 10 шт. —
1 980 ֏
от 100 шт. —
1 510 ֏
от 250 шт. —
1 360 ֏
1 шт.
на сумму 2 560 ֏
Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 2.7 ns |
Forward Transconductance - Min: | 140 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 156 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 49 nC |
Rds On - Drain-Source Resistance: | 3.4 mOhms |
Rise Time: | 8.7 ns |
Series: | CSD18532NQ5B |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 8.2 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
Вес, г | 0.13 |