CSD18535KCS, MOSFETs 60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm 3-TO-220 -55 to 175
![Фото 1/2 CSD18535KCS, MOSFETs 60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm 3-TO-220 -55 to 175](https://static.chipdip.ru/lib/239/DOC025239204.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/162/DOC037162224.jpg)
3 480 ֏
от 10 шт. —
2 910 ֏
от 50 шт. —
2 310 ֏
от 100 шт. —
1 960 ֏
1 шт.
на сумму 3 480 ֏
Описание
Unclassified
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 263 S |
Id - Continuous Drain Current: | 279 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 63 nC |
Rds On - Drain-Source Resistance: | 2 mOhms |
Rise Time: | 3 ns |
Series: | CSD18535KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Case | TO220-3 |
Drain current | 200A |
Drain-source voltage | 60V |
Gate charge | 63nC |
Gate-source voltage | ±20V |
Heatsink thickness | 1.14…1.4mm |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | TEXAS INSTRUMENTS |
Mounting | THT |
On-state resistance | 1.6mΩ |
Polarisation | unipolar |
Power dissipation | 300W |
Technology | NexFET™ |
Type of transistor | N-MOSFET |
Вес, г | 4 |