CSD18535KTT, MOSFETs 60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175
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3 790 ֏
от 10 шт. —
3 040 ֏
от 25 шт. —
2 760 ֏
от 100 шт. —
2 150 ֏
1 шт.
на сумму 3 790 ֏
Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 3 ns |
| Forward Transconductance - Min: | 263 S |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 81 nC |
| Rds On - Drain-Source Resistance: | 2.3 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD18535KTT |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 3 ns |
| Forward Transconductance - Min | 263 S |
| Height | 4.7 mm |
| Id - Continuous Drain Current | 200 A |
| Length | 9.25 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 81 nC |
| Rds On - Drain-Source Resistance | 2.3 mOhm |
| Rise Time | 3 ns |
| RoHS | No |
| Series | CSD18535KTT |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 9 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.9 V |
| Width | 10.26 |
| Вес, г | 1.97 |
Техническая документация
Datasheet
pdf, 405 КБ
