CSD18536KTT, MOSFETs 60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm 2-DDPAK/TO-263 -55 to 175
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см. техническую документацию
см. техническую документацию
5 200 ֏
от 10 шт. —
4 320 ֏
от 100 шт. —
3 170 ֏
от 500 шт. —
2 610 ֏
1 шт.
на сумму 5 200 ֏
Описание
Unclassified
NexFET™ Power MOSFETs Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 500 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 312 S |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 375 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 140 nC |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Continuous Drain Current (Id) | 200A;349A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.6mΩ@100A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@250uA |
| Input Capacitance (Ciss@Vds) | 11.43nF@30V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 375W |
| Total Gate Charge (Qg@Vgs) | 140nC@10V |
| Type | null |
| Вес, г | 2 |
