CSD18537NQ5AT, MOSFETs 60V NCh NexFET Power MOSFET
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Описание
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Описание Транзистор N-MOSFET, полевой, 60В, 50А, 75Вт, VSONP8 5x6мм Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | TPS40170EVM-597 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 3.2 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 75 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Rise Time: | 4 ns |
| Series: | CSD18537NQ5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | NexFET Power MOSFET |
| Typical Turn-Off Delay Time: | 14.4 ns |
| Typical Turn-On Delay Time: | 5.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Вес, г | 44 |
