CSD19506KTT, MOSFETs 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 2-DDPAK/TO-263 -55 to 175

CSD19506KTT, MOSFETs 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 2-DDPAK/TO-263 -55 to 175
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см. техническую документацию
6 200 ֏
от 10 шт.4 800 ֏
от 25 шт.4 360 ֏
от 100 шт.3 490 ֏
1 шт. на сумму 6 200 ֏
Номенклатурный номер: 8004997270
Бренд: Texas Instruments

Описание

Unclassified
NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 500
Fall Time: 5 ns
Forward Transconductance - Min: 297 S
Height: 4.7 mm
Id - Continuous Drain Current: 150 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TO-263-3
Pd - Power Dissipation: 375 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 120 nC
Rds On - Drain-Source Resistance: 2.3 mOhms
Rise Time: 7 ns
Series: CSD19506KTT
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 14 ns
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Continuous Drain Current (Id) 200A
Drain Source On Resistance (RDS(on)@Vgs,Id) 2.3mΩ@100A, 10V
Drain Source Voltage (Vdss) 80V
Gate Threshold Voltage (Vgs(th)@Id) 3.2V@250uA
Input Capacitance (Ciss@Vds) 12.2nF@40V
Operating Temperature -55℃~+175℃@(Tj)
Power Dissipation (Pd) 375W
Total Gate Charge (Qg@Vgs) 156nC@10V
Type null
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