CSD19532KTT, MOSFET CSD19532Q5B Pkg spin
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Fall Time: | 2 ns |
Forward Transconductance - Min: | 113 S |
Id - Continuous Drain Current: | 200 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Pd - Power Dissipation: | 250 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 44 nC |
Rds On - Drain-Source Resistance: | 5.6 mOhms |
Rise Time: | 3 ns |
Series: | CSD19532KTT |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 14 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Channel Type | N |
Maximum Continuous Drain Current | 200 V |
Maximum Drain Source Voltage | 100 V |
Mounting Type | Surface Mount |
Package Type | DDPAK/TO-263 |
Automotive | No |
Channel Mode | Enhancement |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Material | Si |
Maximum Continuous Drain Current (A) | 200 |
Maximum Diode Forward Voltage (V) | 1 |
Maximum Drain Source Resistance (mOhm) | 5.6@10V |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 3.2 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 175 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 250000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 175 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 4 |
PPAP | No |
Process Technology | NexFET |
Product Category | Power MOSFET |
Standard Package Name | TO-263 |
Supplier Package | DDPAK |
Tab | Tab |
Typical Fall Time (ns) | 2 |
Typical Gate Charge @ 10V (nC) | 44 |
Typical Gate Charge @ Vgs (nC) | 44@10V |
Typical Gate Threshold Voltage (V) | 2.6 |
Typical Gate to Drain Charge (nC) | 5.6 |
Typical Gate to Source Charge (nC) | 17 |
Typical Input Capacitance @ Vds (pF) | 3890@50V |
Typical Rise Time (ns) | 3 |
Typical Turn-Off Delay Time (ns) | 14 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Continuous Drain Current - (A) | 200 |
Maximum Drain Source Resistance - (mOhm) | 5.6@10V |
Maximum Drain Source Voltage - (V) | 100 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Gate Threshold Voltage - (V) | 3.2 |
Maximum Power Dissipation - (mW) | 250000 |
Military | No |
Operating Temperature - (??C) | -55~175 |
Typical Gate Charge @ 10V - (nC) | 44 |
Typical Gate Charge @ Vgs - (nC) | 44@10V |
Typical Input Capacitance @ Vds - (pF) | 3890@50V |
Вес, кг | 9.79 |
Техническая документация
Datasheet
pdf, 397 КБ