CSD19533Q5AT, MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET
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2 060 ֏
от 10 шт. —
1 600 ֏
от 100 шт. —
1 210 ֏
от 250 шт. —
1 050 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор N-MOSFET, полевой, 100В, 100А, 96Вт, VSONP8 5x6мм Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 63 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 9.4 mOhms |
| Rise Time: | 6 ns |
| Series: | CSD19533Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 16 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Material | Si |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13 |
| Maximum Diode Forward Voltage (V) | 1 |
| Maximum Drain Source Resistance (mOhm) | 9.4@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Resistance (Ohm) | 2.4 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.4 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 3200 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.2 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 231 |
| Minimum Gate Threshold Voltage (V) | 2.2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | NexFET |
| Product Category | Power MOSFET |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 5 |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Typical Gate Plateau Voltage (V) | 3.9 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Drain Charge (nC) | 4.9 |
| Typical Gate to Source Charge (nC) | 7.9 |
| Typical Input Capacitance @ Vds (pF) | 2050@50V |
| Typical Output Capacitance (pF) | 395 |
| Typical Reverse Recovery Charge (nC) | 163 |
| Typical Reverse Recovery Time (ns) | 62 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 9.6@50V |
| Typical Rise Time (ns) | 6 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 6 |
| Вес, г | 1 |
