CSD19535KCS, MOSFET 100V N-CH NexFET Pwr MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 890 ֏
от 10 шт. —
3 100 ֏
от 50 шт. —
2 820 ֏
от 100 шт. —
2 200 ֏
Добавить в корзину 1 шт.
на сумму 3 890 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 5 ns |
Forward Transconductance - Min: | 274 S |
Id - Continuous Drain Current: | 187 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 78 nC |
Rds On - Drain-Source Resistance: | 3.6 mOhms |
Rise Time: | 15 ns |
Series: | CSD19535KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 60 ns |
Typical Turn-On Delay Time: | 32 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Brand | Texas Instruments |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 5 ns |
Forward Transconductance - Min | 274 S |
Height | 16.51 mm |
Id - Continuous Drain Current | 50 A |
Length | 10.67 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 300 W |
Product Category | MOSFET |
Qg - Gate Charge | 78 nC |
Rds On - Drain-Source Resistance | 3.6 mOhms |
Rise Time | 15 ns |
RoHS | Details |
Series | CSD19535KCS |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Unit Weight | 0.211644 oz |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Width | 4.7 mm |
Вес, г | 5 |
Техническая документация
Документация
pdf, 845 КБ