CSD19536KTTT, MOSFET 100V N-Channel NexFET Power MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 150 |
Fall Time: | 6 ns |
Forward Transconductance - Min: | 329 S |
Id - Continuous Drain Current: | 272 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Pd - Power Dissipation: | 375 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 118 nC |
Rds On - Drain-Source Resistance: | 2.4 mOhms |
Rise Time: | 8 ns |
Series: | CSD19536KTT |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 32 ns |
Typical Turn-On Delay Time: | 13 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.1V |
Maximum Continuous Drain Current | 272 A |
Maximum Drain Source Resistance | 2.8 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 375 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Series | NexFET |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 118 nC @ 0 V |
Width | 9.65mm |
Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 1680 КБ