CSD19538Q2, Транзистор N-канал 100В 14A Q2
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Описание
транзисторы полевые импортные
POWER FIELD-EFFECT TRANSISTOR, 4.6A I(D), 100V, 0.072OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Структура | N-канал | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 2 ns | |
| Forward Transconductance - Min: | 19 S | |
| Id - Continuous Drain Current: | 14.4 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | WSON-FET-6 | |
| Pd - Power Dissipation: | 20.2 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 5.6 nC | |
| Rds On - Drain-Source Resistance: | 59 mOhms | |
| Rise Time: | 3 ns | |
| Series: | CSD19538Q2 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 7 ns | |
| Typical Turn-On Delay Time: | 5 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V | |
| Brand | Texas Instruments | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 3000 | |
| Fall Time | 2 ns | |
| Forward Transconductance - Min | 19 S | |
| Height | 0.75 mm | |
| Id - Continuous Drain Current | 50 A | |
| Length | 2 mm | |
| Manufacturer | Texas Instruments | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | WSON-FET-6 | |
| Packaging | Cut Tape | |
| Pd - Power Dissipation | 20.2 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 5.6 nC | |
| Rds On - Drain-Source Resistance | 59 mOhm | |
| Rise Time | 3 ns | |
| RoHS | Details | |
| Series | CSD19538Q2 | |
| Technology | Si | |
| Tradename | NexFET | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 7 ns | |
| Typical Turn-On Delay Time | 5 ns | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.8 V | |
| Width | 2 mm | |
| Вес, г | 0.02 |
Техническая документация
Datasheet CSD19538Q2T
pdf, 427 КБ
