CSD22206WT, MOSFET -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection 9-DSBGA -55 to 150
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETs Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 250 |
| Fall Time: | 45 ns |
| Forward Transconductance - Min: | 20 S |
| Id - Continuous Drain Current: | 2 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DSBGA-9 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14.6 nC |
| Rds On - Drain-Source Resistance: | 9.1 mOhms |
| Rise Time: | 17 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 118 ns |
| Typical Turn-On Delay Time: | 37 ns |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Base Product Number | CSD22206 -> |
| Current - Continuous Drain (Id) @ 25В°C | 5A (Ta) |
| Drain to Source Voltage (Vdss) | 8V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.6nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2275pF @ 4V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 9-UFBGA, DSBGA |
| Power Dissipation (Max) | 1.7W (Ta) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 2A, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 9-DSBGA (1.5x1.5) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 1.05V @ 250ВµA |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 510 КБ
