CSD25304W1015T, MOSFETs 20V P-Ch NexFET
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см. техническую документацию
см. техническую документацию
1 410 ֏
от 10 шт. —
1 100 ֏
от 100 шт. —
800 ֏
1 шт.
на сумму 1 410 ֏
Описание
Unclassified
NexFET P-Channel Power MOSFETsTexas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 3 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DSBGA-6 |
| Pd - Power Dissipation: | 1.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.3 nC |
| Rds On - Drain-Source Resistance: | 92 mOhms |
| Rise Time: | 4 ns |
| Series: | CSD25304W1015 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, кг | 8.3 |
