CSD25402Q3A, MOSFETs P-CH Pwr MOSFET
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см. техническую документацию
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1 060 ֏
от 10 шт. —
880 ֏
от 100 шт. —
580 ֏
от 500 шт. —
434 ֏
1 шт.
на сумму 1 060 ֏
Описание
Unclassified
Описание Транзистор МОП силовой, Транзистор P-МОП, полевой, 20 В 72 А 2.8 Вт, VSON8
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 12 ns |
| Id - Continuous Drain Current: | 76 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.5 nC |
| Rds On - Drain-Source Resistance: | 8.9 mOhms |
| Rise Time: | 7 ns |
| Series: | CSD25402Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 650 mV |
| Continuous Drain Current (Id) @ 25В°C | 76A |
| Power Dissipation-Max (Ta=25В°C) | 2.8W |
| Rds On - Drain-Source Resistance | 8.9mО© @ 10A,4.5V |
| Transistor Polarity | P Channel |
| Vds - Drain-Source Breakdown Voltage | 20V |
| Vgs - Gate-Source Voltage | 1.15V @ 250uA |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 76 A |
| Maximum Drain Source Resistance | 8900000 Ω |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 0.65V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Material | Si |
| Brand | Texas Instruments |
| Configuration | Single Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 12 ns |
| Forward Transconductance - Min | 59 S |
| Height | 0.9 mm |
| Id - Continuous Drain Current | -15 A |
| Length | 3.15 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSONP-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 7.5 nC |
| Rise Time | 7 ns |
| RoHS | Details |
| Technology | Si |
| Tradename | NexFET |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 25 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vgs th - Gate-Source Threshold Voltage | -900 mV |
| Width | 3 mm |
| Вес, г | 0.03 |
Техническая документация
Datasheet CSD25402Q3A
pdf, 1061 КБ
Datasheet CSD25402Q3A
pdf, 908 КБ
