CSD25402Q3AT, MOSFET -20-V, P channel NexFET power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm 8-VSONP -55 to 150
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
CSD25402Q3A NexFET™ Power MOSFETTexas Instruments CSD25402Q3A NexFET™ Power MOSFET is -20V p-channel MOSFET designed to minimize losses in power conversion load management applications. This device comes in a SON 3.3mm x 3.3mm package that offers excellent thermal performance for the size of the device. Typical applications DC-DC converters, battery management, load switch, and battery protection.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 59 S |
| Id - Continuous Drain Current: | 76 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SON-8 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9.7 nC |
| Rds On - Drain-Source Resistance: | 300 mOhms |
| Rise Time: | 7 ns |
| Series: | CSD25402Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.15 V |
| Вес, г | 84 |
