CSD85312Q3E, MOSFETs Dual 20V N-CH Pwr MOSFETs
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1 500 ֏
от 10 шт. —
1 150 ֏
от 100 шт. —
850 ֏
от 500 шт. —
670 ֏
1 шт.
на сумму 1 500 ֏
Описание
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NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 99 S |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | VSON-8 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.7 nC |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Rise Time: | 27 ns |
| Series: | CSD85312Q3E |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Channel Mode | Enhancement |
| Continuous Drain Current | 39A |
| Drain-Source On-Volt | 20V |
| Gate-Source Voltage (Max) | 10V |
| Mounting | Surface Mount |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | VSON EP |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | N |
| Power Dissipation | 2.5W |
| Type | Power MOSFET |
| Вес, г | 9 |
Техническая документация
Документация
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