CSD87313DMS, MOSFET 30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm 8-WSON -55 to 150
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 13 ns, 13 ns |
Forward Transconductance - Min: | 149 S, 149 S |
Id - Continuous Drain Current: | 17 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | WSON-8 |
Pd - Power Dissipation: | 2.7 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 28 nC |
Rds On - Drain-Source Resistance: | 5.5 mOhms |
Rise Time: | 27 ns, 27 ns |
Series: | CSD87313DMS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 41 ns, 41 ns |
Typical Turn-On Delay Time: | 9 ns, 9 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -10 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Вес, г | 96 |