CSD87331Q3D, MOSFETs 30V Sync Buck NexFET Power Block
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Описание
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NexFET Power Block ICsTexas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 1.3 ns, 2.4 ns |
| Forward Transconductance - Min: | 48 S/26 S |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | LSON-CLIP-8 |
| Pd - Power Dissipation: | 6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.7 nC, 6.4 nC |
| Rds On - Drain-Source Resistance: | 18 mOhms, 5.5 mOhms |
| Rise Time: | 4.5 ns, 4.7 ns |
| Series: | CSD87331Q3D |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 7.4 ns, 11.2 ns |
| Typical Turn-On Delay Time: | 3.4 ns, 3.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V, 1.2 V |
| Base Part Number | CSD87331 |
| Current - Continuous Drain (Id) @ 25В°C | 15A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Standard |
| FET Type | 2 N-Channel(Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 518pF @ 15V |
| Manufacturer | Texas Instruments |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerLDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 6W |
| Series | NexFETв(ў |
| Supplier Device Package | 8-LSON(5x6) |
| Vgs(th) (Max) @ Id | 2.1V, 1.2V @ 250ВµA |
| Вес, г | 2 |
Техническая документация
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