CSD87503Q3E, MOSFETs 30-V Dual N-Channel MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 900 ֏
от 10 шт. —
1 500 ֏
от 100 шт. —
1 090 ֏
от 500 шт. —
880 ֏
1 шт.
на сумму 1 900 ֏
Описание
Unclassified
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 24 S |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | VSON-8 |
| Pd - Power Dissipation: | 15.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 42.8 nC |
| Rds On - Drain-Source Resistance: | 17.3 mOhms |
| Rise Time: | 40 ns |
| Series: | CSD87503Q3E |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain Common Source |
| Maximum Continuous Drain Current - (A) | 10 |
| Maximum Drain Source Resistance - (mOhm) | 16.9@10V |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 2600 |
| Military | No |
| Number of Elements per Chip | 2 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON EP |
| Typical Gate Charge @ 10V - (nC) | 32.9 |
| Typical Gate Charge @ Vgs - (nC) | 13.4@4.5VI32.9@10V |
| Typical Input Capacitance @ Vds - (pF) | 782 |
| Вес, г | 94 |
Техническая документация
Datasheet CSD87503Q3ET
pdf, 1055 КБ
