CSD87588N, MOSFET Sync Buck NexFET Power Block II
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 6.3 ns |
Forward Transconductance - Min: | 93 S |
Id - Continuous Drain Current: | 25 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | PTAB-5 |
Pd - Power Dissipation: | 6 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 2.8 nC |
Rds On - Drain-Source Resistance: | 10.4 mOhms, 3.5 mOhms |
Rise Time: | 36.7 ns |
Series: | CSD87588N |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 20.1 ns |
Typical Turn-On Delay Time: | 12.1 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
Automotive | No |
Military | No |
Packaging | Tape and Reel |
Pin Count | 5 |
Supplier Package | PTAB |
Вес, г | 0.32 |
Техническая документация
Документация
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