CSD87588NT, MOSFETs Sync Buck NexFET Pwr Block II

CSD87588NT, MOSFETs Sync Buck NexFET Pwr Block II
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2 030 ֏
от 10 шт.1 590 ֏
от 100 шт.1 190 ֏
от 250 шт.790 ֏
1 шт. на сумму 2 030 ֏
Номенклатурный номер: 8004997351
Бренд: Texas Instruments

Описание

Unclassified
NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 750
Fall Time: 5 ns, 6.3 ns
Forward Transconductance - Min: 43 S, 93 S
Id - Continuous Drain Current: 25 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: PTAB-5
Pd - Power Dissipation: 6 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 3.2 nC, 13.7 nC
Rds On - Drain-Source Resistance: 10.4 mOhms, 3.5 mOhms
Rise Time: 31.6 ns, 36.7 ns
Series: CSD87588N
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Type: Synchronous Buck NexFET Power Stage
Typical Turn-Off Delay Time: 10.2 ns, 20.1 ns
Typical Turn-On Delay Time: 7.3 ns, 12.1 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
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