CSD88584Q5DC, MOSFETs 40-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm Dual-Cool™ power block, 50 A 22-VSON-CLIP -55 t

CSD88584Q5DC, MOSFETs 40-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm Dual-Cool™ power block, 50 A 22-VSON-CLIP -55 t
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4 580 ֏
от 10 шт.3 570 ֏
от 25 шт.3 380 ֏
от 100 шт.2 600 ֏
1 шт. на сумму 4 580 ֏
Номенклатурный номер: 8004997355
Бренд: Texas Instruments

Описание

Unclassified
NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 17 ns
Forward Transconductance - Min: 149 S
Id - Continuous Drain Current: 50 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: VSON-CLIP-22
Pd - Power Dissipation: 12 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 137 nC
Rds On - Drain-Source Resistance: 680 uOhms
Rise Time: 24 ns
Series: CSD88584Q5DC
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 53 ns
Typical Turn-On Delay Time: 11 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Automotive No
Channel Mode Enhancement
Channel Type N
Maximum Drain Source Resistance - (mOhm) 950@10V
Maximum Drain Source Voltage - (V) 40
Maximum Gate Threshold Voltage - (V) 2.3
Maximum Power Dissipation - (mW) 12000
Military No
Number of Elements per Chip 2
Operating Temperature - (??C) -55~150
Packaging Tape and Reel
Pin Count 22
Process Technology NexFET
Supplier Package VSON-CLIP EP
Typical Gate Charge @ 10V - (nC) 137
Typical Gate Charge @ Vgs - (nC) 68@4.5VI137@10V
Typical Input Capacitance @ Vds - (pF) 9540@20V
Вес, кг 4.83

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