CSD88584Q5DC, MOSFETs 40-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm Dual-Cool™ power block, 50 A 22-VSON-CLIP -55 t
![CSD88584Q5DC, MOSFETs 40-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm Dual-Cool™ power block, 50 A 22-VSON-CLIP -55 t](https://static.chipdip.ru/lib/809/DOC027809933.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 580 ֏
от 10 шт. —
3 570 ֏
от 25 шт. —
3 380 ֏
от 100 шт. —
2 600 ֏
1 шт.
на сумму 4 580 ֏
Описание
Unclassified
NexFET Power Block ICsTexas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 17 ns |
Forward Transconductance - Min: | 149 S |
Id - Continuous Drain Current: | 50 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | VSON-CLIP-22 |
Pd - Power Dissipation: | 12 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 137 nC |
Rds On - Drain-Source Resistance: | 680 uOhms |
Rise Time: | 24 ns |
Series: | CSD88584Q5DC |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 53 ns |
Typical Turn-On Delay Time: | 11 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Drain Source Resistance - (mOhm) | 950@10V |
Maximum Drain Source Voltage - (V) | 40 |
Maximum Gate Threshold Voltage - (V) | 2.3 |
Maximum Power Dissipation - (mW) | 12000 |
Military | No |
Number of Elements per Chip | 2 |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Pin Count | 22 |
Process Technology | NexFET |
Supplier Package | VSON-CLIP EP |
Typical Gate Charge @ 10V - (nC) | 137 |
Typical Gate Charge @ Vgs - (nC) | 68@4.5VI137@10V |
Typical Input Capacitance @ Vds - (pF) | 9540@20V |
Вес, кг | 4.83 |
Техническая документация
Документация
pdf, 681 КБ